منابع مشابه
AlGaN/GaN Schottky Barrier Diodes Employing Diamond-like Carbon passivation
AlGaN/GaN Schottky Barrier Diodes (SBDs) employing the Diamond-like Carbon (DLC) passivation was proposed. The reverse blocking characteristics of the AlGaN/GaN SBD is degraded by the electron trapping effect through the surface trap states. In order to suppress the electron trapping effect and increase the breakdown voltage of AlGaN/GaN SBDs, the surface passivation or treatment should be perf...
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Thanks to its extreme optical and electronic properties, diamond appears to be a promising semiconducting material for photon detection. Its wide band-gap, 5.5 eV, results in a very low leakage current and its electronic properties as high carrier mobility allow fast time response (J. E. Field, 1979). Besides, it has a large breakdown electric field (∼10 V/┤m), a low dielectric constant (i.e. l...
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ژورنال
عنوان ژورنال: EPE Journal
سال: 2017
ISSN: 0939-8368,2376-9319
DOI: 10.1080/09398368.2017.1388625